? 2008 ixys corporation, all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 3ma 85 v v gs(th) v ds = v gs , i d = 8ma 2.0 4.0 v i gss v gs = 20v, v ds = 0v 200 na i dss v ds = v dss 100 a v gs = 0v t j = 125 c 2 ma r ds(on) v gs = 10v, i d = 100a, note 1 4.4 m symbol test conditions maximum ratings v dss t j = 25 c to 150 c85v v dgr t j = 25 c to 150 c, r gs = 1m 85 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c, chip capability 280 a i l(rms) external lead current limit 200 a i dm t c = 25 c, pulse width limited by t jm 1120 a i a t c = 25 c 200 a e as t c = 25 c4j dv/dt i s i dm , v dd v dss , t j 150 c 5 v/ns p d t c = 25 c 700 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c v isol 50/60 hz, rms t = 1min 2500 v~ i isol 1ma t = 1s 3000 v~ m d mounting torque 1.5/13 nm/lb.in. terminal connection torque 1.3/11.5 nm/lb.in. weight 30 g hiperfet tm power mosfets single die mosfet ds98747b(12/08) s g s d minibloc, sot-227 b e153432 g = gate d = drain s = source either source terminal at minibloc can be used as main or kelvin source IXFN280N085 v dss = 85v i d25 = 280a r ds(on) 4.4m features ? international standard package ? minibloc, with aluminium nitride isolation ? low r ds(on) hdmos tm process ? rugged polysilicon gate cell structure ? avalanche rated ? guaranteed fbsoa ? low package inductance ? fast intrinsic rectifier advantages ? easy to mount ? space savings ? high power density applications ? dc-dc converters ? battery chargers ? switched-mode and resonant-mode power supplies ? dc choppers ? temperature and lighting controls n-channel enhancement mode avalanche rated, high dv/dt, low t rr
ixys reserves the right to change limits, test conditions, and dimensions. IXFN280N085 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 60a, note 1 60 100 s c iss 19 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 6.4 nf c rss 3.2 nf t d(on) 40 ns t r 150 ns t d(off) 112 ns t f 60 ns q g(on) 580 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 100a 77 nc q gd 280 nc r thjc 0.18 c/w r thcs 0.05 c/w ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 minibloc, sot-227 b m4 screws (4x) supplied dim. millimeter inches min. max. min. max. a 31.50 31.88 1.240 1.255 b 7.80 8.20 0.307 0.323 c 4.09 4.29 0.161 0.169 d 4.09 4.29 0.161 0.169 e 4.09 4.29 0.161 0.169 f 14.91 15.11 0.587 0.595 g 30.12 30.30 1.186 1.193 h 38.00 38.23 1.496 1.505 j 11.68 12.22 0.460 0.481 k 8.92 9.60 0.351 0.378 l 0.76 0.84 0.030 0.033 m 12.60 12.85 0.496 0.506 n 25.15 25.42 0.990 1.001 o 1.98 2.13 0.078 0.084 p 4.95 5.97 0.195 0.235 q 26.54 26.90 1.045 1.059 r 3.94 4.42 0.155 0.174 s 4.72 4.85 0.186 0.191 t 24.59 25.07 0.968 0.987 u -0.05 0.1 -0.002 0.004 note 1: pulse test, t 300 s; duty cycle, d 2%. source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 280 a i sm repetitive, pulse width limited by t jm 1120 a v sd i f = 100a, v gs = 0v, note 1 1.2 v t rr 200 ns q rm 0.76 c i rm 8.00 a i f = 50a, -di/dt = 100a/ s, v r = 50v resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 60a r g = 1 (external)
? 2008 ixys corporation, all rights reserved IXFN280N085 ixys ref: f_280n085(9y-n17)12-02-08-a fig. 1. extended output characteristics @ 25oc 0 50 100 150 200 250 300 350 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v ds - volts i d - amperes v gs = 10v 9v 8v 5v 6v 7v fig. 2. output characteristics @ 125oc 0 50 100 150 200 250 300 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v ds - volts i d - amperes v gs = 10v 9v 8v 5v 6v 7v fig. 3. r ds(on) normalized to i d = 140a value vs. junction temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 280a i d = 140a fig. 4. r ds(on) normalized to i d = 140a value vs. drain current 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 0 50 100 150 200 250 300 350 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 5. maximum drain current vs. case temperature 0 20 40 60 80 100 120 140 160 180 200 220 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes external lead current limit fig. 6. forward voltage drop of intrinsic diode 0 25 50 75 100 125 150 175 200 225 250 275 300 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 v sd - volts i s - amperes t j = 125oc t j = 25oc
ixys reserves the right to change limits, test conditions, and dimensions. IXFN280N085 fig. 11. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 7. input admittance 0 20 40 60 80 100 120 140 160 180 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 20 40 60 80 100 120 140 0 20 40 60 80 100 120 140 160 180 i d - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 50 100 150 200 250 300 350 400 450 500 550 600 q g - nanocoulombs v gs - volts v ds = 43v i d = 100a i g = 10ma fig. 9. capacitance 1 10 100 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - nanofarad s f = 1 mhz c iss c rss c oss
? 2008 ixys corporation, all rights reserved IXFN280N085 ixys ref: f_280n085(9y-n17)12-02-08-a fig. 12. forward-bias safe operating area @ t c = 25oc 1 10 100 1,000 10,000 1 10 100 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 1ms 100s r ds(on) limit 10ms dc external-lead limit 100ms fig. 13. forward-bias safe operating area @ t c = 75oc 1 10 100 1,000 10,000 1 10 100 v ds - volts i d - amperes t j = 150oc t c = 75oc single pulse 1ms 100s r ds(on) limit 10ms dc external-lead limit 100ms 25s
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